Frontiers in Electronics

By Benjamin Iniguez

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.

• Format: Hardcover
• Language: English
• ISBN: 9814583189
• ISBN13: 9789814583183
• Release Date: March 2014
• Publisher: World Scientific Publishing Company
• Length: 204 Pages
• Weight: 1.31 lbs.
• Dimensions: 0.8" x 6.6" x 9.9"