The pn junction forms the basis of a large number of semiconductor devices. A BJT is formed by joining three sections of semiconductor material, each with a different doping concentration. The three sections can be either a thin nregion sandwiched between p] and p layers, or a p region between n and n+ layers, where the superscript "plus" indicates more heavily doped material. The resulting BJTs are called pnp and npn transistors, respectively.
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