Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties

By Hamid Bentarzi

Book Overview

Introduction.- The MOS Structure.- The MOS Oxide and Its Defects.- Review of Transport Mechanism in Thin Oxides of MOS Devices.- Experimental Techniques.- Theoretical Approaches of Mobile Ions Density Distribution Determination.- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.

• Format: Paperback
• Language: English
• ISBN: 3642266886
• ISBN13: 9783642266881
• Release Date: February 2013
• Publisher: Springer
• Length: 106 Pages
• Weight: 0.39 lbs.
• Dimensions: 0.3" x 6.1" x 9.2"