Transistor Level Modeling for Analog/RF IC Design

By Wladyslaw Grabinski

Book Overview

This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

• Format: Hardcover
• Language: English
• ISBN: 1402045557
• ISBN13: 9781402045554
• Release Date: June 2003
• Publisher: Springer
• Length: 294 Pages
• Weight: 1.40 lbs.
• Dimensions: 0.8" x 6.4" x 9.8"