TDCV CHARACTERIZATION OF DEFECTS IN ULTRA THIN SIO2 KINDS OF FILMS: TDCV = Temperature Dependent Capacitance Voltage

By Jean-Yves Rosaye

When a MOS structure (Metal Oxide Semiconductor) is subjected to an external perturbation, defects are generated in the oxide and at the oxide-semiconductor interface. If one can easily measure... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3838351541
• ISBN13: 9783838351544
• Release Date: March 2010
• Publisher: LAP Lambert Academic Publishing
• Length: 120 Pages
• Weight: 0.41 lbs.
• Dimensions: 0.3" x 6.0" x 9.0"