Semiconductor device and authentication system: United States Patent 9972586

By: Okagaki, Takeshi

In order to realize a silicon PUF of lower power consumption, a semiconductor device includes first and second MIS transistors of the same conductive type in off-state coupled in series, as a PUF element. The PUF element outputs a signal of high level or low level depending on the potential of a connection node of the first and the second MIS transistors. Preferably, the MIS transistors are fin-type FETs.

• Format: Paperback
• Language: English
• ISBN: B08RGN5Y99
• ISBN13: 9798585708282
• Release Date: January 1
• Publisher: Independently Published
• Length: 26 Pages
• Weight: 0.19 lbs.
• Dimensions: 0.1" x 8.5" x 11.0"