Operation and Modeling of the MOS Transistor

By Colin McAndrew and Yannis Tsividis

Book Overview

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.

KEY FEATURES
BLUnified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
BLExpanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
BLNew chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
BLExtensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

• Format: Hardcover
• Language: English
• ISBN: 0195170148
• ISBN13: 9780195170146
• Release Date: June 2003
• Publisher: Oxford University Press
• Length: 640 Pages
• Weight: 2.65 lbs.
• Dimensions: 7.7" x 1.4" x 9.6"