Nonlinear Design: Fets and Hemts

By Peter H. Ladbrooke

This exciting new resource describes a unified approach to non-linear analysis and design involving compound semiconductor field effect transistors (FETs) and heterojunction field effect transistors (HFETs). It provides an understanding of the characterization and analysis devices made by non-linear design, highlighting the relationship between design and performance. The rarely acknowledged errors inherent in extracting capacitive and conductance elements, as required by all circuit models, from measurements made at the terminals of a device is given, and how these limitations and restrictions often yield workable results is demonstrated.Under large-signal conditions, the operating point may shift due to self-biasing, and the circuit simulator must account for the changed RF characteristics accordingly. Examples of how these reconstructed curves compare with pulsed measurements are given. Implementation in Harmonic Balance and Time-Domain simulators is outlined, including start-up transients and demonstration of long-term transiens. The book offers understanding of the relationship between device fabrication technology and circuit performance. Taking a practical approach to the physics of compact devices, the book will be valuable to microwave circuit designers and fabricators.

• Format: Hardcover
• Language: English
• ISBN: 1630818682
• ISBN13: 9781630818685
• Release Date: August 2021
• Publisher: Artech House Publishers
• Length: 347 Pages
• Weight: 2.00 lbs.
• Dimensions: 1.1" x 7.2" x 10.2"