MOCVD growth and electrical characterisation of InAs thin films

By Precious Shamba

Many quantum confined devices such as lasers and high electron mobility transistors make use of the narrow band gap and high electron mobility of InAs. The difficulty associated with the preparation... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3845409886
• ISBN13: 9783845409887
• Release Date: July 2011
• Publisher: LAP Lambert Academic Publishing
• Length: 104 Pages
• Weight: 0.36 lbs.
• Dimensions: 0.3" x 6.0" x 9.0"