Method for producing nitride single crystal: United States Patent 9976229

By: Ishiguro, Tohru

A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

• Format: Paperback
• Language: English
• ISBN: B08RGYN5NT
• ISBN13: 9798585014383
• Release Date: January 1
• Publisher: Independently Published
• Length: 28 Pages
• Weight: 0.20 lbs.
• Dimensions: 0.1" x 8.5" x 11.0"