Nanoscale Redox Reaction at Metal/Oxide Interface: A Case Study on Schottky Contact and Reram

By Takahiro Nagata

General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.

• Format: Paperback
• Language: English
• ISBN: 4431548491
• ISBN13: 9784431548492
• Release Date: May 2020
• Publisher: Springer
• Length: 89 Pages
• Weight: 0.35 lbs.
• Dimensions: 0.2" x 6.1" x 9.2"