Manufacturing method of semiconductor device including multi-layered source layer and channel extending therethrough: United States Patent 9978771

By: Hwang, Sun Kak

There are provided a manufacturing method of a semiconductor device. A manufacturing method of a semiconductor device includes forming a preliminary source stack structure including a first source layer, a first protective layer, a sacrificial layer, a second protective layer, and a second source layer, which are sequentially stacked in the recited order, forming channel layers extending through the second source layer and partially inside the first source layer, and growing a first region of an interlayer source layer from each channel layer, the first region of the interlayer source layer surrounding each channel layer in a region between the first and second protective layers.

• Format: Paperback
• Language: English
• ISBN13: 9798584837853
• Release Date: December 2020
• Publisher: Independently published
• Length: 25 Pages
• Weight: 0.19 lbs.
• Dimensions: 11.0" x 0.1" x 8.5"