Ion implantation into GaN and AlInN

By Abdul Majid

A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3845474998
• ISBN13: 9783845474991
• Release Date: January 2012
• Publisher: LAP Lambert Academic Publishing
• Length: 168 Pages
• Weight: 0.56 lbs.
• Dimensions: 0.4" x 6.0" x 9.0"