III-Nitride Based Light Emitting Diodes and Applications

By Tae-Yeon Seong

Book Overview

1: Introduction Part A. Progress and prospect of growth of wide-band-gap III-nitrides; Hiroshi Amano.

2: Introduction Part B. Ultra-efficient solid-state lighting: likely characteristics, economic benefits, technological approaches; Jeff Y. Tsao, et al.

3: Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates; Takashi Egawa and Osamu Oda.

4: Epitaxy Part B. Epitaxial Growth of GaN on Patterned Sapphire Substrates; Kazuyuki Tadatomo.

5: Growth and optical properties of GaN-based non- and semipolar LEDs; Michael Kneissl et al.

6: Active region Part A. Internal Quantum Efficiency in Light Emitting Diodes; Elison Matioli and Claude Weisbuch.

7: Active region Part B. Internal Quantum Efficiency; Jong-In Shim.

8: Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs; Matteo Meneghini, et al.

9: Light extraction efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs; C. Lalau Keraly, et al.

10: Light extraction efficiency Part B. Light Extraction of High Efficient Light-Emitting Diodes; Ja-Yeon Kim, et al.

11: Packaging. Phosphors and white LED packaging; Rong-Jun Xie and Naoto Hirosaki.

12: High voltage LED; Wen-Yung Yeh, et al.

13: Color Quality of White LEDs; Yoshi Ohno.

14: Emerging System Level Applications for LED Technology; Robert F. Karlicek, Jr.

• Format: Hardcover
• Language: English
• ISBN: 9400758626
• ISBN13: 9789400758629
• Release Date: May 2013
• Publisher: Springer
• Length: 390 Pages
• Weight: 1.64 lbs.
• Dimensions: 0.9" x 6.1" x 9.2"