High Voltage P-channel DMOS-IGBTs in SiC

By Yang Sui

SiC has been an excellent material for power switching devices because of its wide bandgap and high breakdown field. SiC power MOSFETs below 10 kV have been successfully developed and fabricated in... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 363910756X
• ISBN13: 9783639107562
• Release Date: December 2008
• Publisher: VDM Verlag
• Length: 132 Pages
• Weight: 0.41 lbs.
• Dimensions: 0.3" x 6.0" x 9.0"