Germanium-Silicon Strained Layers and Heterostructures, Volume 24: Supplement 24 (Advances in Electronics and Electron Physics, Supplement 24)

By S.C. Jain

Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.

• Format: Hardcover
• Language: English
• ISBN: 0120145987
• ISBN13: 9780120145980
• Release Date: July 1994
• Publisher: Academic Press
• Length: 302 Pages
• Weight: 1.55 lbs.
• Dimensions: 9.5" x 1.0" x 6.5"