Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers

By Diego Guerra

This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3847325671
• ISBN13: 9783847325673
• Release Date: February 2012
• Publisher: LAP Lambert Academic Publishing
• Length: 224 Pages
• Weight: 0.74 lbs.
• Dimensions: 0.5" x 6.0" x 9.0"