Forming conductive plugs for memory device: United States Patent 9997452

By: Uchiyama, Shiro

Apparatuses and methods with conductive plugs for a memory device are described. An example method includes: forming a plurality of shallow trench isolations elongating from a first surface of a semiconductor substrate toward a second surface of the semiconductor substrate; thinning the semiconductor substrate until first surfaces of the plurality of shallow trench isolations are exposed; forming plurality of via holes, each via hole of the plurality of via holes through a corresponding one of the plurality of shallow trench isolations; and filling the plurality of via holes with a conductive material to form a plurality of conductive plugs.

• Format: Paperback
• Language: English
• ISBN: B08RH2YCPH
• ISBN13: 9798584475888
• Release Date: January 1
• Publisher: Independently Published
• Length: 28 Pages
• Weight: 0.20 lbs.
• Dimensions: 0.1" x 8.5" x 11.0"