Failure analysis of Hot-Electron Effect on power RF N-LDMOS transistor

By Mohamed Ali Belaïd

Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 365920062X
• ISBN13: 9783659200625
• Release Date: July 2012
• Publisher: LAP Lambert Academic Publishing
• Length: 76 Pages
• Weight: 0.27 lbs.
• Dimensions: 0.2" x 6.0" x 9.0"