Etching method: United States Patent 9997374

By: Takeda, Ryohei

An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is -35.degree. C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

• Format: Paperback
• Language: English
• ISBN: B08QXC12BJ
• ISBN13: 9798583583782
• Release Date: January 1
• Publisher: Independently Published
• Length: 28 Pages
• Weight: 0.20 lbs.
• Dimensions: 0.1" x 8.5" x 11.0"