ELECTRON TRANSPORT IN InSb HETEROSTRUCTURES BASED MESOSCOPIC DEVICES: MOLECULAR BEAM EPITAXY OF AND TRANSPORT IN HETEROSTRUCTURES

By Niti Goel

Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m* = 0.0139m0). These characteristics make... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3639179188
• ISBN13: 9783639179187
• Release Date: April 2010
• Publisher: VDM Verlag
• Length: 200 Pages
• Weight: 0.66 lbs.
• Dimensions: 0.5" x 6.0" x 9.0"