Electromigration Modeling at Circuit Layout Level

By Feifei He and Cher Ming Tan

CHAPTER 1 Introduction

1.1 Overview of Electromigration

1.2 Modeling of Electromigration

1.3 Organization of the Book

1.4 Summary

CHAPTER 2 3D Circuit Model Construction and Simulation

2.1 Introduction

2.2 Layout Extraction and 3D Model Construction

2.3 Transient Electro-thermo-structural Simulations and Atomic Flux Divergence (AFD) Computation

2.4 Simulation Results and Discussions

2.5 Effects of Barrier Thickness and Low-κ Dielectric on Circuit EM Reliability

2.6 Summary

CHAPTER 3 Comparison of EM Performances in Circuit and Test Structures

3.1 Introduction

3.2 Model Construction and Simulation Setup

3.3 Distributions of Atomic Flux Divergences under Different Operation Conditions

3.4 Effects of Interconnect Structures on Circuit EM Reliability

3.5 Effects of Transistor Finger Number on Circuit EM Reliability

3.6 Summary

CHAPTER 4 Interconnect EM Reliability Modeling at Circuit Layout Level

4.1 Introduction

4.2 Model Construction and Simulation Setup

4.3 Distributions of Atomic Flux Divergences

4.4 Effects of Layout and Process parameters on Circuit EM Reliability.

4.5 Summary

CHAPTER 5 Concluding Remarks

5.1 Conclusions

5.2 Recommenations for Future Work

• Format: Paperback
• Language: English
• ISBN: 9814451207
• ISBN13: 9789814451208
• Release Date: May 2013
• Publisher: Springer
• Length: 103 Pages
• Weight: 0.38 lbs.
• Dimensions: 0.2" x 6.1" x 9.2"