Device Modeling of Algan/Gan High Electron Mobility Transistors (Hemts)

By Manju Korwal Chattopadhyay

High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies. Owing largely to a high... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3838396294
• ISBN13: 9783838396293
• Release Date: October 2010
• Publisher: LAP Lambert Academic Publishing
• Length: 128 Pages
• Weight: 0.44 lbs.
• Dimensions: 0.3" x 6.0" x 9.0"