Development of 20 GHz monolithic transmit modules

By: Nasa, National Aeronautics and Space Adm

The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave circuit integration which were successfully overcome. Yield and customer considerations finally led to two separate chips, one containing the power amplifiers and the other containing the complete five bit phase shifter. Higgins, J. A. Unspecified Center ANTENNA FEEDS; CHIPS (ELECTRONICS); ELECTROMAGNETIC WAVE TRANSMISSION; FIELD EFFECT TRANSISTORS; PHASE SHIFT CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTOR DEVICES; TRANSMITTERS; GALLIUM ARSENIDES; INTEGRATED CIRCUITS; ION IMPLANTATION...

• Format: Paperback
• Language: English
• ISBN: 173099203X
• ISBN13: 9781730992032
• Release Date: January 1
• Publisher: Independently Published
• Length: 104 Pages
• Weight: 0.58 lbs.
• Dimensions: 0.2" x 8.5" x 11.0"