Design and Realization of Bipolar Transistors (Design And Measurement in Electronic Engineering)

By Peter Ashburn

Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.

• Format: Hardcover
• Language: English
• ISBN: 0471917001
• ISBN13: 9780471917007
• Release Date: August 1988
• Publisher: Wiley
• Length: 216 Pages
• Weight: 0.95 lbs.
• Dimensions: 1.4" x 2.2"