This book is a specialized monograph that explores the deposition and application of high-quality aluminum nitride (AlN) thin films grown at low temperatures using Plasma-Enhanced Atomic Layer Deposition (PEALD). It details how PEALD overcomes the limitations of traditional high-temperature methods, enabling the growth of crystalline AlN with sharp interfaces and excellent uniformity on temperature-sensitive substrates like silicon and GaAs. The book systematically presents the authors' research, covering process optimization, interface engineering, and the fundamental relationship between deposition parameters and film properties. It further highlights the functional application of these films in cutting-edge fields, demonstrating their role as passivation and interface modification layers to significantly enhance the performance of nano-photonic emitter arrays and quantum dot-sensitized solar cells. Overall, it provides a comprehensive guide from materials science fundamentals to advanced optoelectronic and energy device integration.
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