Clusters of Interstitial Atoms in Silicon and Germanium

By A.L. Aseev

The problem of the formation of interstitial atom clusters in Si and Ge crystals is treated in order to present useful results for the understanding of problems which may arise after implatation, thermal gettering, and thermal treatment of Si and Ge wafers of crystals.

• Format: Hardcover
• Language: English
• ISBN: 3055016009
• ISBN13: 9783055016004
• Release Date: November 1994
• Publisher: Wiley-VCH
• Length: 152 Pages
• Weight: 1.20 lbs.
• Dimensions: 9.7" x 0.5" x 7.0"