Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

by Iraj Sadegh Amiri and Mahdiar Ghadiry

Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)
Discusses an analytical model for the ionization coefficient and breakdown voltage of GNR-based FETs
Presents simulations for GNR-based FETs in terms of breakdown voltage and calculates the maximum operating voltage of the typical GNRFETs at different conditions

• Format: Paperback
• Language: English
• ISBN: 9811065497
• ISBN13: 9789811065491
• Release Date: November 2017
• Publisher: Springer
• Length: 86 Pages